Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors

被引：2

作者：

Catalfamo, Frank ^{[1
]}

Yen, Tingfang ^{[1
]}

Yun, Juhyung ^{[1
]}

Anderson, Wayne A. ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 04期

关键词：

ZnO/Si MSM photodetector; radiation resistance; room-temperature annealing; THIN-FILMS;

D O I：

10.1007/s11664-010-1411-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO/Si metal-semiconductor-metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 x 10(13) cm(-2). ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V (0) (+) ) and (V-zn(-) - H+)(0), respectively.

引用

页码：433 / 439

页数：7

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