Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector

被引：112
|
作者：
Qian, Y. P. [1 ,2 ]
Guo, D. Y. [1 ,2 ]
Chu, X. L. [3 ,4 ]
Shi, H. Z. [1 ,2 ]
Zhu, W. K. [1 ,2 ]
Wang, K. [1 ,2 ]
Huang, X. K. [1 ,2 ]
Wang, H. [1 ,2 ]
Wang, S. L. [1 ,2 ]
Li, P. G. [1 ,2 ]
Zhang, X. H. [4 ]
Tang, W. H. [3 ]
机构：
[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China
[2] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China
[4] China Aerosp Acad Syst Sci & Engn, Beijing 100876, Peoples R China
来源：
MATERIALS LETTERS | 2017年 / 209卷
基金：
中国国家自然科学基金;
关键词：
p-Type; beta-Ga2O3 thin film; Mg-doping; Solar-blind photodetector;
D O I：
10.1016/j.matlet.2017.08.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The p-type high insulating thin films were obtained by doping Mg into beta-Ga2O3. Thin films with various Mg concentrations were deposited on (0001) c-plane Al2O3 substrate by radio frequency magnetron sputtering followed by post-annealing treatment. The crystal structure expanded due to the substitution of the trivalent Ga3+ with the divalent Mg2+ in a larger ion radius. The Fermi level (E-F) of the Mg doped film is closer to the valence band, exhibiting a characteristic of weak p-type. The Mg doped Ga2O3 thin films were used to construct the metal/semiconductor/metal (MSM) structure, and the devices showed a high resistance (4.1 pA at 10 V), a high sensitivity (8.7 x 10(5)%), a high responsivity (23.8 mA/W) and a short decay time (0.02 s) under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetector. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：558 / 561
页数：4
相关论文
共 50 条
  • [1] Fabrication and characterization of Mg-doped ε-Ga2O3 solar-blind photodetector
    Liu, Zeng
    Huang, Yuanqi
    Li, Haoran
    Zhang, Chuang
    Jiang, Weiyu
    Guo, Daoyou
    Wu, Zhenping
    Li, Peigang
    Tang, Weihua
    VACUUM, 2020, 177 (177)
  • [2] High Quality P-Type Mg-Doped β-Ga2O3-δ Films for Solar-Blind Photodetectors
    Zhou, Xin
    Li, Ming
    Zhang, Jinzhong
    Shang, Liyan
    Jiang, Kai
    Li, Yawei
    Zhu, Liangqing
    Hu, Zhigao
    Chu, Junhao
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (04) : 580 - 583
  • [3] Arrays of Solar-Blind Ultraviolet Photodetector Based on β-Ga2O3 Epitaxial Thin Films
    Peng, Yangke
    Zhang, Yan
    Chen, Zhengwei
    Guo, Daoyou
    Zhang, Xiao
    Li, Peigang
    Wu, Zhenping
    Tang, Weihua
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 30 (11) : 993 - 996
  • [4] A Solar-Blind β-Ga2O3 Nanowire Photodetector
    Weng, W. Y.
    Hsueh, T. J.
    Chang, S. J.
    Huang, G. J.
    Chang, S. P.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (10) : 709 - 711
  • [5] A β-Ga2O3 Solar-Blind Photodetector Prepared by Furnace Oxidization of GaN Thin Film
    Weng, W. Y.
    Hsueh, T. J.
    Chang, S. J.
    Huang, G. J.
    Hsueh, H. T.
    IEEE SENSORS JOURNAL, 2011, 11 (04) : 999 - 1003
  • [6] High-quality Mg-doped p-type Ga2O3 crystalline thin film by pulsed laser
    Ebrahimi-Darkhaneh, Hadi
    Shekarnoush, Mahsa
    Arellano-Jimenez, Josefina
    Rodriguez, Rodolfo
    Colombo, Luigi
    Quevedo-Lopez, Manuel
    Banerjee, Sanjay K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (31) : 24244 - 24259
  • [7] High-quality Mg-doped p-type Ga2O3 crystalline thin film by pulsed laser
    Hadi Ebrahimi-Darkhaneh
    Mahsa Shekarnoush
    Josefina Arellano-Jimenez
    Rodolfo Rodriguez
    Luigi Colombo
    Manuel Quevedo-Lopez
    Sanjay K. Banerjee
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 24244 - 24259
  • [8] Solar-blind ultraviolet photodetector based on Ti-doped Ga2O3/Si p–n heterojunction
    Ugur Harmanci
    M. Tahir Gulluoglu
    Ferhat Aslan
    Abdullah Atilgan
    Abdullah Yildiz
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 20223 - 20228
  • [9] Performance of A Single Phosphorus-doped β-Ga2O3 Microwire Solar-blind Ultraviolet Photodetector
    Feng Q.-J.
    Xie J.-Z.
    Dong Z.-J.
    Gao C.
    Liang S.
    Liu W.
    Liang H.-W.
    Faguang Xuebao/Chinese Journal of Luminescence, 2021, 42 (11): : 1653 - 1660
  • [10] Facile synthesis of β-Ga2O3 nanowires network for solar-blind ultraviolet photodetector
    Zhang, Miaomiao
    Kang, Shuai
    Wang, Liang
    Zhang, Kun
    Wu, Yutong
    Feng, Shuanglong
    Lu, Wenqiang
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (17)
12345