Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy

被引：154

作者：

Murakami, M

Matsumoto, Y

Nakajima, K

Makino, T

Segawa, Y

Chikyow, T

Ahmet, P

Kawasaki, M

Koinuma, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[4] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

[5] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 18期

关键词：

D O I：

10.1063/1.1365412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial anatase thin films were fabricated on lattice-matched (-0.2%) LaAlO3 (001) substrates in the layer-by-layer fashion by laser molecular-beam epitaxy. X-ray diffraction and transmission electron microscope show the films to exhibit high crystallinity and atomically defined interfaces. By virtue of the adoption of LaAlO3 substrate, which is transparent to photoexcitation of TiO2, optical band gaps could be determined to be 3.3 eV at room temperature. A photoluminescence band due to recombination of self-trapped excitons was observed at 5 K to give the peak maximum at 2.2 eV. As a result of the high degree of orientation of the epitaxial films, anisotropic optical absorption was clearly observed. (C) 2001 American Institute of Physics.

引用

页码：2664 / 2666

页数：3

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