Monte Carlo Study of the Coulomb Interaction in Nanoscale Silicon Devices

被引：8

作者：

Sano, Nobuyuki ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 01期

关键词：

BALLISTIC ELECTRON-TRANSPORT; SEMICONDUCTOR-DEVICES; PART I; PERFORMANCE; SIMULATION; MOSFET; SCATTERING; DYNAMICS; IMPURITY;

D O I：

10.1143/JJAP.50.010108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three-dimensional Monte Carlo simulations coupled self-consistently with the Poisson equation are carried out under the double-gate metaloxide-semiconductor field-effect-transistor (MOSFET) structures with various channel lengths. The Coulomb force experienced by an electron inside the device is directly evaluated by performing the Monte Carlo simulations with or without the full Coulomb interaction and the plasmon excitation represented by dynamical potential fluctuations in the source and drain regions by the channel electrons is demonstrated. The drain current and transconductance are greatly degraded below the channel length of 20nm if the self-consistent potential fluctuations are taken into account and, thus, the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties. (c) 2011 The Japan Society of Applied Physics

引用

页数：6

共 26 条

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