A Low Band Cellular Terminal Antenna Impedance Tuner in 130nm CMOS-SOI Technology

被引：0
作者：
Lindstrand, Jonas [1 ]
Vasilev, Ivaylo [1 ]
Sjoland, Henrik [1 ]
机构：
[1] Lund Univ, S-22100 Lund, Sweden
来源：
PROCEEDINGS OF THE 40TH EUROPEAN SOLID-STATE CIRCUIT CONFERENCE (ESSCIRC 2014) | 2014年
关键词：
CMOS; Silicon-on-insulator (SOT); Impedance matching; Impedance tuner; Switches; PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an 01P3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is ldB or lower in the frequency range from 700-900MHz with spurious emissions below -30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used.
引用
收藏
页码：459 / 462
页数：4
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