70W C-band GaN Solid State Power Amplifier for Satellite Use

被引：0

作者：

Hirano, T. ^{[1
]}

Shibuya, A. ^{[1
]}

Kawabata, T. ^{[1
]}

Kido, M. ^{[1
]}

Yamada, K. ^{[1
]}

Seino, K. ^{[1
]}

Ichikawa, A. ^{[1
]}

Kamikokura, A. ^{[1
]}

机构：

[1] Mitsubishi Elect TOKKI Syst Corp, Space Syst & Elect Engn Dept, 730-11 Kamimachiya, Kamakura, Kanagawa 2470065, Japan

来源：

2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年

关键词：

Gallium compounds; High power amplifiers; Microwave power FET amplifiers; RF power circuits; Satellite communication; Space technology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

70W C-band gallium nitride solid state power amplifier (GaN SSPA) was designed and manufactured for satellite use. GaN devices have been already used for various fields from lower frequency hands (L-handand S-band) such as ground station amplifier and radar system. For space application, expectation has been raised for replacing traveling wave tube amplifiers (TWTAs) with GaN SSPAs. Development result shows that, with an electrical power conditioner (EPC), the GaN SSPA achieved output power of 69.4W with power added efficiency (PAE) of 38.9%. Moreover, footprint and mass of this SSPA are much less than those of TWTA. Mitsubishi Electric TOKKI Systems (MEWS) shipped the 70W C-band GaN SSPA to the customer in 2013 for MELOS's first flight model.

引用

页码：783 / 785

页数：3