Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications

被引：0

作者：

Tsai, Yi-Chia ^{[1
]}

Lee, Ming-Yi ^{[1
]}

Li, Yiming ^{[1
,2
,3
]}

Samukawa, Seiji ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Commun Engn, Dept Elect & Comp Engn, Parallel & Sci Comp Lab, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

EFFICIENCY; MINIBAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an efficient method is applied to calculate the miniband structure and density of states for well-ordered Ge/Si quantum dot (QD) array fabricated by combining the self-assemble bio-template and damage-free neutral beam etching. Within the envelop-function framework, this computational model surmounts theoretical approximations of the multidimensional Kronig-Penney method and the numerical results provide a guideline for Ge/Si QD solar cell design by simulating the effect of the interdot space and QD's dimension on miniband structure and conversion efficiency.

引用

页码：68 / 71

页数：4

共 12 条

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