Poly(3-hexylthiophene-2,5-diyl) as a Hole Transport Layer for Colloidal Quantum Dot Solar Cells

被引：46

作者：

Neo, Darren C. J. ^{[1
]}

Zhang, Nanlin ^{[1
]}

Tazawa, Yujiro ^{[1
]}

Jiang, Haibo ^{[1
,2
]}

Hughes, Gareth M. ^{[1
]}

Grovenor, Chris R. M. ^{[1
]}

Assender, Hazel E. ^{[1
]}

Watt, Andrew A. R. ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, 16 Pk Rd, Oxford OX1 3PH, England

[2] Univ Western Australia, Ctr Microscopy Characterisat & Anal, 35 Stirling Highway, Crawley, WA 6009, Australia

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

colloidal quantum dots; lead sulfide; hole transport layer; P3HT; solar cell; RECOMBINATION; SOLIDS; PBS;

D O I：

10.1021/acsami.5b10228

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lead sulfide colloidal quantum dot (CQD) solar cells demonstrate extremely high short-circuit currents (J(sc)) and are making decent progress in power conversion efficiencies. However, the low fill factors (FF) and open-circuit voltages have to be addressed with urgency to prevent the stalling of efficiency improvements. ThiS paper highlights the importance of improving hole extraction, which received much less attention as compared to the electron-accepting component of the device architecture (e.g., TiO2 or ZnO). Here, we show the use of semiconducting polymer poly(3-hexylthiophene-2,5-diyl) to create efficient CQD devices by improving hole transport, removing interfacial barriers, and minimizing shunt pathways, thus resulting in an overall improvement in device performance stemming from better J(sc) and FF.

引用

页码：12101 / 12108

页数：8

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