SCHOTTKY DIODE-BASED MICROWAVE LIMITER WITH ADJUSTABLE THRESHOLD POWER LEVEL

被引：23

作者：

Bera, S. C. ^{[1
]}

Basak, K. ^{[1
]}

Jain, V. K. ^{[1
]}

Singh, R. V. ^{[1
]}

Garg, V. K. ^{[1
]}

机构：

[1] Space Applicat Ctr ISRO, Ahmadabad 380015, Gujarat, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 07期

关键词：

microwave limiter; Schottky barrier diode; RF resistance; threshold power level;

D O I：

10.1002/mop.25255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents design, realization and test results of an Schottky diode limiter with provision of adjustable threshold power level operating at 11.5 GHz. The article also presents nonlinear behavior of the Schottky diode under different bias load line conditions and suitable bias conditions of the diode to function as limiter. Test result shows nearly 1.5 dB flat leakage over the input power range of 15 dB and the threshold power adjustment of nearly 15 dB by bias voltage adjustment. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1671-1673,2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25255

引用

页码：1671 / 1673

页数：3

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