Carrier capture delay and modulation bandwidth in an edge-emitting quantum dot laser

被引:18
作者
Asryan, Levon V. [1 ]
Wu, Yuchang [1 ]
Suris, Robert A. [2 ]
机构
[1] Virginia Polytech Inst & State Univ, Blacksburg, VA 24061 USA
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
THRESHOLD CURRENT-DENSITY; CONFINED ACTIVE-REGION; TEMPERATURE-DEPENDENCE; SEMICONDUCTOR-LASERS; EFFICIENCY;
D O I
10.1063/1.3571295
中图分类号
O59 [应用物理学];
学科分类号
摘要
We show that the carrier capture from the optical confinement layer into quantum dots (QDs) can strongly limit the modulation bandwidth omega(-3) dB of a QD laser. As a function of the cross-section sigma(n) of carrier capture into a QD, omega(-3) dB asymptotically approaches its highest value when sigma(n) -> infinity the case of instantaneous capture). With reducing sigma(n), omega(-3) dB decreases and becomes zero at a certain nonvanishing sigma(n)(min). The use of multiple-layers with QDs significantly improves the laser modulation response-omega(-3) dB is considerably higher in a multilayer structure as compared to a single-layer structure at the same dc current. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3571295]
引用
收藏
页数:3
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