Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

被引：56

作者：

Deng, Erping ^{[1
]}

Zhao, Zhibin ^{[1
]}

Xin, Qingming ^{[2
]}

Zhang, Jingwei ^{[1
]}

Huang, Yongzhang ^{[1
]}

机构：

[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China

[2] Elect Power Res Inst, China Southern Power Grid, State Key Lab HVDC, Guangzhou 510080, Guangdong, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 78卷

基金：

中国国家自然科学基金;

关键词：

IGBT modules; Press pack IGBTs; Thermal characteristics; Reliability; MECHANICAL-BEHAVIOR; FAILURE MODES; WIRE;

D O I：

10.1016/j.microrel.2017.07.095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications. The difference in the packaging style and working conditions between IGBT modules and press pack IGBTs creates distinctions in, for instance, the thermal characteristics and reliability. Those distinctions lead to different applications and working conditions. In this paper, the development of IGBT devices has been reviewed, including the distinction of IGBT modules and press pack IGBTs in packaging style. Most importantly, the thermal and reliability characteristics have been compared in detail and the applications that are most suitable for IGBT modules and press pack IGBTs were outlined. The comparison of the thermal characteristics, reliability and applications provides guidance for users to take full advantage of the devices according to their requirements. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：25 / 37

页数：13

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