A level set method for thin film epitaxial growth

被引：70

作者：

Chen, S ^{[1
]}

Merriman, B

Kang, M

Caflisch, RE

Ratsch, C

Cheng, LT

Gyure, M

Fedkiw, RP

Anderson, C

Osher, S

机构：

[1] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA

[2] HRL Labs, Malibu, CA 90265 USA

[3] Stanford Univ, Dept Comp Sci, Stanford, CA 94305 USA

来源：

JOURNAL OF COMPUTATIONAL PHYSICS | 2001年 / 167卷 / 02期

关键词：

D O I：

10.1006/jcph.2000.6689

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

We present a level set based numerical algorithm for simulating a model of epitaxial growth. The island dynamics model is a continuum model for the growth of thin films. In this paper, we emphasize the details of the numerical method used to simulate the island dynamics model. (C) 2001 Academic Press.

引用

页码：475 / 500

页数：26

共 45 条

[1] The fast construction of extension velocities in level set methods [J].

Adalsteinsson, D ;

Sethian, JA .

JOURNAL OF COMPUTATIONAL PHYSICS, 1999, 148 (01) :2-22

[2] DYNAMICS OF IRREVERSIBLE ISLAND GROWTH DURING SUBMONOLAYER EPITAXY [J].

BALES, GS ;

CHRZAN, DC .

PHYSICAL REVIEW B, 1994, 50 (09) :6057-6067

[3]

Barabasi A-Ls, 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]

[4] Island dynamics and the level set method for epitaxial growth [J].

Caflisch, RE ;

Gyure, MF ;

Merriman, B ;

Osher, SJ ;

Ratsch, C ;

Vvedensky, DD ;

Zinck, JJ .

APPLIED MATHEMATICS LETTERS, 1999, 12 (04) :13-22

[5] COMPUTATION OF SHARP PHASE BOUNDARIES BY SPREADING - THE PLANAR AND SPHERICALLY SYMMETRICAL CASES [J].

CAGINALP, G ;

SOCOLOVSKY, EA .

JOURNAL OF COMPUTATIONAL PHYSICS, 1991, 95 (01) :85-100

[6] A level set formulation of eulerian interface capturing methods for incompressible fluid flows [J].

Chang, YC ;

Hou, TY ;

Merriman, B ;

Osher, S .

JOURNAL OF COMPUTATIONAL PHYSICS, 1996, 124 (02) :449-464

[7] A simple level set method for solving Stefan problems [J].

Chen, S ;

Merriman, B ;

Osher, S ;

Smereka, P .

JOURNAL OF COMPUTATIONAL PHYSICS, 1997, 135 (01) :8-29

[8]

CHENG LT, UNPUB SYMMETRIC METH

[9] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[10]

Fedkiw RP, 1999, J COMPUT PHYS, V152, P457, DOI 10.1006/jcph.1999.6136

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