Structure and composition of the c(4 x 4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy

被引：19
作者：
Han, BK [1 ]
Li, L [1 ]
Fu, Q [1 ]
Hicks, RF [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 25期
关键词：
D O I：
10.1063/1.121599
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surfaces of GaAs (001) were prepared by metalorganic vapor-phase epitaxy and characterized by scanning tunneling microscopy, x-ray photoelectron spectroscopy, infrared spectroscopy, and low-energy electron diffraction. Upon removal from the reactor, the gallium arsenide surface exhibits a (1 x 2) reconstruction, which is a disordered variant of the c(4 x 4). The disorder arises from the presence of adsorbed alkyl groups. Heating the sample to 350 degrees C desorbs the hydrocarbons and produces a well-ordered c(4x4) structure. A model is proposed for the alkyl-terminated (1 x 2) reconstruction. (C) 1998 American Institute of Physics. [S0003-6951(98)04125-4].
引用
收藏
页码：3347 / 3349
页数：3
相关论文
共 19 条
  • [1] Bellamy L.J., 1975, The Infra-Red Spectra of Complex Molecules, V3rd ed., P13, DOI 10.1007/978-94-011-6017-9_2
  • [2] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    [J]. PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
  • [3] IN-SITU MONITORING OF THE C(4X4) TO THE 2X4 SURFACE PHASE-TRANSFORMATION ON GAAS(001) BY GRAZING-INCIDENCE X-RAY-DIFFRACTION
    ETGENS, VH
    SAUVAGESIMKIN, M
    PINCHAUX, R
    MASSIES, J
    JEDRECY, N
    WALDHAUER, A
    GREISER, N
    [J]. SURFACE SCIENCE, 1994, 320 (03) : 252 - 258
  • [4] SITES FOR TRIMETHYLGALLIUM ADSORPTION ON GAAS(001)
    GEE, PE
    QI, HH
    HICKS, RF
    [J]. SURFACE SCIENCE, 1995, 330 (02) : 135 - 146
  • [5] Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources
    Han, BK
    Li, L
    Kappers, MJ
    Hicks, RF
    Yoon, H
    Goorsky, MS
    Higa, KT
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (02) : 81 - 84
  • [6] DETERMINATION OF THE SURFACE-STRUCTURES OF THE GAAS(001)-(2X4) AS-RICH PHASE
    HASHIZUME, T
    XUE, QK
    ICHIMIYA, A
    SAKURAI, T
    [J]. PHYSICAL REVIEW B, 1995, 51 (07) : 4200 - 4212
  • [7] OBSERVATION OF CARBON INCORPORATION DURING GALLIUM-ARSENIDE GROWTH BY MOLECULAR-BEAM EPITAXY
    JOSEPH, DM
    BALAGOPAL, R
    HICKS, RF
    SADWICK, LP
    WANG, KL
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2203 - 2204
  • [8] Optical characterization of surfaces during epitaxial growth using RDS and GIXS
    Kamiya, I
    Mantese, L
    Aspnes, DE
    Kisker, DW
    Fuoss, PH
    Stephenson, GB
    Brennan, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 163 (1-2) : 67 - 77
  • [9] ARSENIC DIMERS AND MULTILAYERS ON (001)GAAS SURFACES IN ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
    KAMIYA, I
    TANAKA, H
    ASPNES, DE
    FLOREZ, LT
    COLAS, E
    HARBISON, JP
    BHAT, R
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (10) : 1238 - 1240
  • [10] STRUCTURE OF (001) GAAS-SURFACES DURING EPITAXIAL-GROWTH BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
    KAMIYA, I
    TANAKA, H
    ASPNES, DE
    KOZA, M
    BHAT, R
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (23) : 3206 - 3208
12