Ellipticity dependence of high-order harmonic generation in disordered semiconductors

被引:4
作者
Orlando, Gianfranco [1 ]
Lee, Min-, I [2 ]
Ho, Tak-San [3 ]
机构
[1] Natl Taiwan Univ, Natl Ctr Theoret Sci, Dept Phys, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Ctr Quantum Sci & Engn, Dept Phys, Taipei 10617, Taiwan
[3] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
关键词
ellipticity; dependences; high-order; harmonic; generation; disordered; ELECTRONS; MODEL;
D O I
10.1088/1361-6455/ac864e
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We analyze the ellipticity dependence of high order harmonic generation (HHG) in disordered semiconductors. We show that a disordered crystal can radiated HHG spectra containing only odd harmonics of the laser frequency for all values of the ellipticity of the laser. Furthermore, we show that the HHG yield of our disordered models decreases monotonically with increasing laser ellipticity as observed in recent experiments. I particular, our numerical calculations, based on a coarse grained model, reproduce many of the qualitative features of the experimental HHG spectra of ZnO and GaAs.
引用
收藏
页数:11
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