The Influence and Application of Bond Wires Failure on Electrothermal Characteristics of IGBT Module

被引:14
作者
Chen, Jie [1 ]
Deng, Erping [1 ,2 ]
Liu, Peng [1 ]
Yang, Shaohua [3 ]
Huang, Yongzhang [1 ,2 ]
机构
[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] NCEPU Yantai Power Semicond Technol Res Inst Co L, Yantai 264006, Shandong, Peoples R China
[3] China CEPREI Lab, Guangzhou 510610, Peoples R China
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2021年 / 11卷 / 09期
基金
中国国家自然科学基金;
关键词
Bond wires failure; electrothermal characteristics; influence mechanism; insulated gate bipolar transistor (IGBT); separation strategy; IN-SITU DIAGNOSTICS; PROGNOSTICS;
D O I
10.1109/TCPMT.2021.3102242
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bond wires failure is one of the most common failure modes of the insulated gate bipolar transistor (IGBT) module, which will cause an increase in the overall ON-state voltage drop V-CE, and it is generally believed to not affect the junction-to-case thermal resistance R-thjc. The measured V-CE mainly consists of two parts: the voltage drop of the IGBT chip V-CE_Chip and that of the bond wire V-CE_wire; the influence of bond wires failure on VCE should be discussed and explained in two parts. However, these actual measurement parameters are not considered before. In this article, the impact mechanism of bond wires failure on electrothermal characteristics of the IGBT module is analyzed with the help of realistic simulation models and experiment verification. The results show that the bond wires failure only affects V-CE_wire, and the impact on V-CE_ Chip is small, which can be ignored. Meanwhile, the increase in the virtual junction temperature is not caused by the increase in the power loss of the IGBT chip but by the increase in the current density of bond feet, which is caused by the decrease in the effective contact area. Besides, the measured R-thjc is not the intrinsic thermal resistance but slightly smaller than the intrinsic thermal resistance, and it decreases as the bond wires failure. Furthermore, the proposed mechanism can provide method guidance for the separation strategy of concurrent failure modes of IGBT modules only by monitoring the ON-state voltage drop.
引用
收藏
页码:1426 / 1434
页数:9
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