Ammonia-free chemically deposited CdS films as active layers in thin film transistors

被引：51

作者：

Arreola-Jardon, G. ^{[1
]}

Gonzalez, L. A. ^{[2
]}

Garcia-Cerda, L. A. ^{[3
]}

Gnade, B. ^{[4
]}

Quevedo-Lopez, M. A. ^{[4
,5
]}

Ramirez-Bon, R. ^{[1
]}

机构：

[1] IPN, Ctr Invest & Estudios Avanzados, Unidad Queretaro, Queretaro 76001, Qro, Mexico

[2] Univ Sonora, Ctr Invest Fis, Hermosillo 83000, Sonora, Mexico

[3] Ctr Invest Quim Aplicada, Saltillo 25253, Coahuila, Mexico

[4] Univ Texas Dallas, Richardson, TX 75083 USA

[5] Univ Sonora, Dept Polimeros & Mat, Hermosillo 83000, Sonora, Mexico

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 01期

关键词：

Cadmium sulfide; Chemical bath deposition; Field effect transistors; Electrical properties and measurements; SOLAR-CELLS; MICROSTRUCTURE;

D O I：

10.1016/j.tsf.2010.08.097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we have grown CdS thin films using an ammonia-free chemical bath deposition process for the active layer in thin film transistors. The CdS films were deposited substituting sodium citrate for ammonia as the complexing agent. The electrical characterization of the as-deposited CdS-based thin film transistors shows that the field effect mobility and threshold voltage were in the range of 0.12-0.16 cm(2)V(-1)s(-1) and 8.8-25 V. respectively, depending on the channel length. The device performance was improved considerably after thermal annealing in forming gas at 250 degrees C for 1 h. The mobility of the annealed devices increased to 4.8-8.8 cm(2)V(-1) s the threshold voltage decreased to 8.4-12 V. I-on/I-off for the annealed devices was approximately 10(5)-10(6). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：517 / 520

页数：4

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