Optimized plasma-polymerized fluoropolymer mask for local porous silicon formation

被引：6

作者：

Lu, Bin ^{[1
]}

Defforge, Thomas ^{[1
]}

Fodor, Balint ^{[1
,2
]}

Morillon, Benjamin ^{[3
]}

Alquier, Daniel ^{[1
]}

Gautier, Gael ^{[1
]}

机构：

[1] Univ Tours, GREMAN, CNRS, UMR7347,INSA,CVL, 16 Rue Pierre & Marie Curie,BP 7155, F-37071 Tours 2, France

[2] Hungarian Acad Sci, Inst Tech Phys & Mat Sci, Energy Res Ctr, Konkoly Thege Miklos Ut 29-33, H-1121 Budapest, Hungary

[3] STMicroelectronics, 10 Rue Thales Milet CS 97155, F-37071 Tours 2, France

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 21期

关键词：

DEPOSITION; TECHNOLOGY; ETHYLENE; SURFACE; FILMS; MEMS;

D O I：

10.1063/1.4953088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mass production of hybrid silicon/porous silicon substrates requires a simple, low-cost, and reliable patterning process to locally form porous regions on silicon wafers. An innovative masking technology based on plasma-polymerized fluoropolymer (PPFP) has been proposed as a promising candidate. However, the use of PPFP film on silicon substrate requires an adhesion promoter which may cause several side effects, including film peeling-off and pinhole formation. This work aims to improve the adhesion strength without using the adhesion promoter. The present study shows that, by adopting a hydrogen-terminated surface and an optimized gas precursor composition of 25/25 sccm CHF3/C2H4, good adhesion of PPFP to silicon is obtained before and during porous silicon formation. PPFP mask deposited at high pressure shows well-defined borders after anodization. Finally, an optimized PPFP-based patterning process is proposed. Published by AIP Publishing.

引用

页数：7

共 35 条

[1] MEMS applications of porous silicon
Benecke, W
Splinter, A
[J]. DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS II, 2001, 4592 : 76 - 87
[2] Porous silicon localization for implementation in matrix biosensors
Benilov, A.
Cabrera, M.
Skryshevsky, V.
Martin, J.-R.
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 139 (2-3): : 221 - 225
[3] Canham L., 2014, HDB POROUS SILICON
[4] Porous Silicon/Silicon Hybrid Substrate Applied to the Monolithic Integration of Common-Mode and Bandpass RF Filters
Capelle, Marie
Billoue, Jerome
Poveda, Patrick
Gautier, Gael
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (12) : 4163 - 4167
[5] RF performances of inductors integrated on localized p+-type porous silicon regions
Capelle, Marie
Billoue, Jerome
Poveda, Patrick
Gautier, Gael
[J]. NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 8
[6] Large area etching for porous semiconductors
Carstensen, J
Christophersen, M
Lölkes, S
Ossei-Wusu, E
Bahr, J
Langa, S
Popkirov, G
Föll, H
[J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 9, 2005, 2 (09): : 3339 - 3343
[7] d'Agostino R., 1990, PLASMA DEPOSITION TR, P95
[8] Plasma-deposited fluoropolymer film mask for local porous silicon formation
Defforge, Thomas
Capelle, Marie
Tran-Van, Francois
Gautier, Gael
[J]. NANOSCALE RESEARCH LETTERS, 2012, 7
[9] Electron beam induced carbon deposition used as a negative resist for selective porous silicon formation
Djenizian, T
Santinacci, L
Hildebrand, H
Schmuki, P
[J]. SURFACE SCIENCE, 2003, 524 (1-3) : 40 - 48
[10] Deposition of nanostructured fluoropolymer films on silicon substrates via plasma polymerization of allylpentafluorobenzene
Fu, GD
Kang, ET
Neoh, KG
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (50) : 13902 - 13910

← 1 2 3 4 →