Effects of As2 flux and atomic hydrogen irradiation for growth of InGaAs quantum wires by molecular beam epitaxy

被引：21
作者：
Sugaya, T
Tanuma, Y
Nakagawa, T
Sekiguchi, T
Yonei, K
Sugiyama, Y
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan
[2] Shibaura Inst Technol, Minato Ku, Tokyo 108, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词：
molecular beam epitaxy (MBE); As-2; flux; atomic hydrogen; InGaAs quantum wire; selective growth;
D O I：
10.1143/JJAP.37.1497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaAs/InAlAs quantum wire structures on V-grooved InP substrates have been fabricated with As-2 Bur acid atomic hydrogen irradiation using molecular beam epitaxy. Under As-2 flux, the V-grooves are preserved during the InAlAs barrier layer growth due to a small migration of the In atoms, but the V-shape is not preserved and hence the quantum wires cannot be fabricated under an As-4 flux. The InGaAs quantum wires grown with atomic hydrogen have a narrow photoluminescence peak and a uniform cathode-luminescence image. These phenomena maybe caused by the absence of (311)A sidewall quantum wells due to re-evaporation of the group-III atoms by the atomic hydrogen irradiation.
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页码：1497 / 1500
页数：4
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