Plasma-enhanced chemical vapour deposition of inorganic nanomaterials using a chloride precursor

被引:12
|
作者
Yang, Rong [1 ]
Zheng, Jie [1 ]
Li, Wei [1 ]
Qu, Jianglan [1 ]
Li, Xingguo [1 ]
机构
[1] Peking Univ, BNLMS, State Key Lab Rare Earth Mat Chem & Applicat, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
关键词
LOW-TEMPERATURE DEPOSITION; PECVD SILICON-NITRIDE; METAL-OXIDE NANOWIRES; CUBIC BORON-NITRIDE; GAS-PHASE REDUCTION; TIO2; THIN-FILMS; ATMOSPHERIC-PRESSURE; REACTIVE PLASMAS; AIDED NANOFABRICATION; COBALT NANOPARTICLES;
D O I
10.1088/0022-3727/44/17/174015
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plasmas have been widely used for the fabrication of nanomaterials owing to their unique properties in chemical reactions. The plasma-enhanced chemical vapour deposition (PECVD) technique has been applied to produce a large variety of materials. In this perspective, we take a look at the progress made in the research of PECVD using chloride precursors in the last decade. We discuss the advantage of using a plasma compared with the thermal chemical vapour deposition technique and emphasize the special effects of plasma on nanomaterial fabrications in the PECVD technique, including kinetic and thermodynamic effects. We also outline the current challenges for this technique, and attempt to offer our personal opinion on the future applications of the PECVD technique with chloride precursors.
引用
收藏
页数:6
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