InGaN-GaN MQW LEDs with Si treatment

被引：26

作者：

Hsu, YP ^{[1
]}

Chang, SJ

Su, YK

Chen, SC

Tsai, JM

Lai, WC

Kuo, CH

Chang, CS

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

[4] S Epitaxy Corp, Hsin Shi 744, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 08期

关键词：

InGaN-GaN; light-emitting diode (LED); multiquantum well (MQW); Si treatment; surface roughness;

D O I：

10.1109/LPT.2005.851989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin SixNy layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

引用

页码：1620 / 1622

页数：3

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