Investigations of the indentation-induced crystallographic phase changes in silicon using Raman spectroscopy

被引：2
作者：
Chaudhri, M. M. [1 ]
Khayyat, M. M. O. [1 ]
Hasko, D. G. [1 ]
机构：
[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England
来源：
SURFACE REVIEW AND LETTERS | 2007年 / 14卷 / 04期
关键词：
Si(100); amorphous silicon; indentation; phase transition; temperature effects; phase diagram of silicon;
D O I：
10.1142/S0218625X07009992
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Raman spectroscopy, which is a non-destructive technique, has been used to investigate the effect of sample temperature on indentation-induced crystallographic phase transitions in crystalline silicon and amorphous silicon films deposited on a sapphire crystal. It has been shown that in both types of sample, whereas 300K Vickers diamond indentations lead to the transformation to the Si-II phase during indenter loading on the crystalline and amorphous samples, there is no such transformation in either sample when it is cooled down to 77K. An explanation of the experimental results has been provided using the pressure-temperature phase diagram of silicon.
引用
收藏
页码：719 / 723
页数：5
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