Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass

被引：8

作者：

Ohama, M ^{[1
]}

Fujiwara, T ^{[1
]}

Ikushima, AJ ^{[1
]}

机构：

[1] Toyota Technol Inst, Frontier Mat Lab, Res Ctr Adv Photon Technol, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.122179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report quantitative measurements on the decay of optical absorption at various elevated temperatures in ultraviolet (UV)-irradiated SiO2 glasses doped with Ge. From the Arrhenius plots of decay time constants, the activation energy of the Ge E' center in the UV-irradiated glasses has been determined to be 2.4 +/- 0.3 eV, while the reported activation energy of Ge E' decay in UV-poled glasses is 0.4 +/- 0.1 eV. The present experimental results strongly suggest that the decay process of the Ge E' center induced in UV-irradiated glasses is quite different from that in UV-poled glasses. (C) 1998 American Institute of Physics.

引用

页码：1481 / 1483

页数：3

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