Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass

We report quantitative measurements on the decay of optical absorption at various elevated temperatures in ultraviolet (UV)-irradiated SiO2 glasses doped with Ge. From the Arrhenius plots of decay time constants, the activation energy of the Ge E' center in the UV-irradiated glasses has been determined to be 2.4 +/- 0.3 eV, while the reported activation energy of Ge E' decay in UV-poled glasses is 0.4 +/- 0.1 eV. The present experimental results strongly suggest that the decay process of the Ge E' center induced in UV-irradiated glasses is quite different from that in UV-poled glasses. (C) 1998 American Institute of Physics.