Full spectral analysis of line width roughness

被引:22
作者
Leunissen, LHA [1 ]
Lorusso, GF [1 ]
Ercken, M [1 ]
Croon, JA [1 ]
Yang, H [1 ]
Azordegan, A [1 ]
DiBiase, T [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIX, PTS 1-3 | 2005年 / 5752卷
关键词
D O I
10.1117/12.600185
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is the standard deviation. However, this approach is incomplete and ignores a substantial amount of information. We propose here a full spectral analysis to investigate and monitor LWR. A variety of estimators, such as standard deviation, peak-to-valley, average, correlation length and Fourier analysis have been implemented on-line on CDSEM. The algorithms were successfully tested against e-beam written LWR patterns, both deterministic and random. This approach allows a fully automated investigation of LWR. This methodology was used to monitor LWR over a long period of time, benchmark new resists and to investigate the effect of LWR on device performance and yield.
引用
收藏
页码:499 / 509
页数:11
相关论文
共 15 条
[1]  
Barabasi A.-L., 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[2]   Towards a complete description of line width roughness: A comparison of different methods for vertical and spatial LER and LWR analysis and CD variation [J].
Constantoudis, V ;
Patsis, GP ;
Leunissen, LHA ;
Gogolides, E .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 :967-977
[3]   Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions [J].
Constantoudis, V ;
Patsis, GP ;
Leunissen, LHA ;
Gogolides, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :1974-1981
[4]   Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield [J].
Croon, JA ;
Leunissen, LHA ;
Jurczak, M ;
Benndorf, M ;
Rooyackers, R ;
Ronse, K ;
Decoutere, S ;
Sansen, W ;
Maes, HE .
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, :227-230
[5]  
CROON JA, IN PRESS MATCHING PR
[6]  
ERCKEN M, 2002, P INT
[7]   Effect of process parameters on pattern edge roughness of chemically-amplified resists [J].
Koh, HP ;
Lin, QY ;
Hu, X ;
Chan, L .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :240-251
[8]   Spatial frequency analysis of line edge roughness in nine chemically related photoresists. [J].
Lawrence, WG .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 :713-724
[9]   Line edge roughness: experimental results related to a two-parameter model [J].
Leunissen, LHA ;
Lawrence, WG ;
Ercken, M .
MICROELECTRONIC ENGINEERING, 2004, 73-4 :265-270
[10]  
LEUNISSEN LHA, IN PRESS SEMICONDUCT