X-ray diffractometry and topography of lattice plane curvature in thermally deformed Si wafer

被引：6

作者：

Yi, J. M. ^{[1
]}

Chu, Y. S. ^{[2
]}

Argunova, T. S. ^{[1
,3
,4
]}

Domagala, J. Z.

Je, J. H. ^{[1
]}

机构：

[1] POSTECH, Xray Imaging Ctr, Pohang 790784, South Korea

[2] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[3] RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF SYNCHROTRON RADIATION | 2008年 / 15卷

关键词：

imaging; diffraction;

D O I：

10.1107/S0909049507045013

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The correlation between the microscopic lattice plane curvature and the dislocation structure in thermal warpage of 200 mm-diameter Czochralski Si (001) wafers has been investigated using high-resolution X-ray diffractometry and topography. It is found that the (004) lattice plane curvature is locally confined between two neighboring slip bands, with the rotation axis parallel to the slip bands. High-resolution topography reveals that the curvature resulted from a fragmented dislocation structure. The local confinement is attributed to the multiplication of the dislocations that are generated between the two slip bands. (C) 2008 International Union of Crystallography.

引用

页码：96 / 99

页数：4

共 18 条

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