Multicarrier transport in epitaxial multilayer graphene

被引：41

作者：

Lin, Yu-Ming ^{[1
]}

Dimitrakopoulos, Christos ^{[1
]}

Farmer, Damon B. ^{[1
]}

Han, Shu-Jen ^{[1
]}

Wu, Yanqing ^{[1
]}

Zhu, Wenjuan ^{[1
]}

Gaskill, D. Kurt ^{[2
]}

Tedesco, Joseph L. ^{[2
]}

Myers-Ward, Rachael L. ^{[2
]}

Eddy, Charles R., Jr. ^{[2
]}

Grill, Alfred ^{[1
]}

Avouris, Phaedon ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] USN, Res Lab, Adv SiC Epitaxial Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

关键词：

carrier mobility; doping; epitaxial layers; graphene; Hall effect; SILICON-CARBIDE; SI-FACE; TRANSISTORS; GROWTH;

D O I：

10.1063/1.3485671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. (c) 2010 American Institute of Physics. [doi:10.1063/1.3485671]

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