Interconnects in the third dimension: Design challenges for 3D ICs

被引:66
作者
Bernstein, Kerry [1 ]
Andry, Paul [1 ]
Cann, Jerome [2 ]
Emma, Phil [1 ]
Greenberg, David [1 ]
Haensch, Wilfried [1 ]
Ignatowski, Mike [1 ]
Koester, Steve [1 ]
Magerlein, John [1 ]
Puri, Ruchir [1 ]
Young, Albert [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Route 134,POB 218, Yorktown Hts, NY 10598 USA
[2] IBM Microelect, Essex Jct, VT 05452 USA
来源
2007 44TH ACM/IEEE DESIGN AUTOMATION CONFERENCE, VOLS 1 AND 2 | 2007年
关键词
3D; interconnect; through-wafer via; chip-stack; silicon carrier; bandwidth; latency; hierarchical memory;
D O I
10.1109/DAC.2007.375227
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Despite generation upon generation of scaling, computer chips have until now remained essentially 2-dimensional. Irnprovements in on-chip wire delay and in the maximum number of I/O per chip have not been able to keep up with transistor performance growth; it has become steadily harder to hide the discrepancy. 3D chip technologies come in a number of flavors, but are expected to enable the extension of CMOS performance. Designing in three dimensions, however, forces the industry to look at formerly-two-dimensional integration issues quite differently, and requires the re-fitting of multiple existing EDA capabilities.
引用
收藏
页码:562 / +
页数:2
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