Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition

被引：5

作者：

Kumar, Raj ^{[1
]}

Brom, Joseph E. ^{[2
]}

Redwing, Joan M. ^{[2
]}

Hunte, Frank ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 06期

基金：

美国国家科学基金会;

关键词：

TRANSPORT;

D O I：

10.1063/1.4907802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intrinsic defects in Bi2Se3 topological insulators tend to produce a high carrier concentration and current leakage through the bulk material. Bi2Se3 thin films were grown by hybrid physical chemical vapor deposition on (0001) Al2O3 substrates with high Se vapor pressure to reduce the occurrence of Se vacancies as the main type of defect. Consequently, the carrier concentration was reduced to similar to 5.75 x 10(18) cm(-3) comparable to reported carrier concentration in Bi2Se3 thin films. Magnetotransport measurements were performed on the films and the data were analyzed for weak anti-localization using the Hikami-Larkin-Nagaoka model. The estimated alpha and l(phi) values showed good agreement with the symplectic case of 2-D transport of topological surface states in the quantum diffusion regime. The temperature and angular dependence of magnetoresistance indicate a large contribution of the 2-D surface carriers to overall transport properties of Bi2Se3 thin film. (C) 2015 AIP Publishing LLC.

引用

页数：6

共 30 条

[1] Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition [J].

Brom, Joseph E. ;

Ke, Yue ;

Du, Renzhong ;

Won, Dongjin ;

Weng, Xiaojun ;

Andre, Kalissa ;

Gagnon, Jarod C. ;

Mohney, Suzanne E. ;

Li, Qi ;

Chen, Ke ;

Xi, X. X. ;

Redwing, Joan M. .

APPLIED PHYSICS LETTERS, 2012, 100 (16)

[2] Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator [J].

Chang, Cui-Zu ;

Zhang, Jinsong ;

Feng, Xiao ;

Shen, Jie ;

Zhang, Zuocheng ;

Guo, Minghua ;

Li, Kang ;

Ou, Yunbo ;

Wei, Pang ;

Wang, Li-Li ;

Ji, Zhong-Qing ;

Feng, Yang ;

Ji, Shuaihua ;

Chen, Xi ;

Jia, Jinfeng ;

Dai, Xi ;

Fang, Zhong ;

Zhang, Shou-Cheng ;

He, Ke ;

Wang, Yayu ;

Lu, Li ;

Ma, Xu-Cun ;

Xue, Qi-Kun .

SCIENCE, 2013, 340 (6129) :167-170

[3] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

[4] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[5] Topological insulators with inversion symmetry [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW B, 2007, 76 (04)

[6] Superconducting proximity effect and Majorana fermions at the surface of a topological insulator [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW LETTERS, 2008, 100 (09)

[7] Inverse Spin-Galvanic Effect in the Interface between a Topological Insulator and a Ferromagnet [J].

Garate, Ion ;

Franz, M. .

PHYSICAL REVIEW LETTERS, 2010, 104 (14)

[8] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[9] Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111) [J].

He, Liang ;

Xiu, Faxian ;

Wang, Yong ;

Fedorov, Alexei V. ;

Huang, Guan ;

Kou, Xufeng ;

Lang, Murong ;

Beyermann, Ward P. ;

Zou, Jin ;

Wang, Kang L. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)

[10]

HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707

← 1 2 3 →