Modelling and Comparison of Single Gate and Dual Gate Organic Thin Film Transistor

被引：0
|
作者：
Saini, Deepa [1 ]
Saini, Shilpa [1 ]
Negi, Shubham [2 ]
机构：
[1] HNB Garhwal Univ, USIC, Sch Engn & Technol, Srinagar, Uttarakhand, India
[2] Graph Era Univ, Dept Elect & Commun, Dehra Dun, Uttarakhand, India
来源：
2016 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN COMMUNICATION TECHNOLOGIES (ETCT) | 2016年
关键词：
OTFT; dual gate; mobility; current on-off ratio; transconductance; sub-threshold slope and threshold voltage; FIELD-EFFECT TRANSISTORS; CONTACT;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
This paper is aimed at giving the basic knowledge of the organic thin film transistors. To start with basic knowledge of different structures of single gate OTFT has been provided. Thereafter the simulation of BGBC single gate OTFT has been done and the results are shown. Finally the simulation of dual gate OTFT has been done and the results are shown. These two different structures have then been compared based on their performance parameters like threshold voltage, sub-threshold slope, mobility, current ratio. It is seen that the performance of DG-OTFT is better that the single gate OTFT in all the spheres because of the extra gate that has been added. Thus the DG_OTFT devices are more robust and have better performance.
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页数：5
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