Reconfigurable Logic-Memory Hybrid Device Based on Ferroelectric Hf0.5Zr0.5O2

In this letter, we demonstrate a reconfigurable logic-memory hybrid device (R-LMHD), which can be dynamically and reversibly switched between the logic- and memory-mode. The logic-mode device exhibits a 2.5 x 10(6) ON/OFF current ratio and nearly zero hysteresis, which indicates the weak influence of defects trapping and detrapping. The memory-mode device shows a large memory window up to 2.19 V and the window maintains up to 1.44 V after 10(6) program/erase cycles. The excellent performance can be attributed to the high crystalline quality of ferroelectric Hf0.5Zr0.5O2 (HZO) and the insertion of internal metal gate (IMG) between HZO and dielectric layer. Such R-LMHD features run-time tuning of threshold voltage and hysteresis, electrically reconfigurable. Furthermore, the subthreshold swing (SS) is electrically tunable with a minimum SS (SSmin) of 35 mV/decade and a maintainability of sub-60 mV/decade about 3 orders. The R-LMHD provides a promising way to realize future in-memory computing and low power consumption applications.