Osmium barriers for direct copper electrodeposition in Damascene processing

被引：42

作者：

Josell, D ^{[1
]}

Witt, C

Moffat, TP

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Cookson Elect, Enthone Div, Orange, CT 06516 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 02期

关键词：

D O I：

10.1149/1.2149214

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Direct electrodeposition of copper on osmium (Os) is described. Effective superfilling of submicrometer trenches by direct copper electrodeposition onto the osmium barrier layer is demonstrated. Surface modification of osmium prior to copper deposition as demonstrated herein, including electrochemical reduction in sulfuric acid and exposure to plating additives, presents an avenue for future process optimization. The work suggests further examination of Os as a diffusion barrier and/or adhesion layer for Damascene metallization. (c) 2005 The Electrochemical Society.

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页码：C41 / C43

页数：3

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