Investigation of optoelectronic characteristics of indium composition in InGaN-based light-emitting diodes

被引：15
|
作者：
Usman, Muhammad [1 ]
Mushtaq, Urooj [1 ]
Zheng, Dong-Guang [2 ]
Han, Dong-Pyo [3 ]
Muhammad, Nazeer [4 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Pakistan
[2] Hanyang Univ, Dept Elect & Commun Engn, Ansan, South Korea
[3] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[4] COMSATS Univ Islamabad, Dept Math, Wah Cantonment 47040, Pakistan
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 04期
关键词：
light-emitting diode; indium; numerical simulation; quantum well; QUANTUM-WELLS; POLARIZATION-FIELDS; BAND PARAMETERS; BLUE; EFFICIENCY; GAN; SEMICONDUCTORS; PERFORMANCE;
D O I：
10.1088/2053-1591/aaff15
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a detailed numerical analysis of the optoelectronic characteristics of the indium composition on the device performance. The analysis includes discussion of the band-bending, builtin field, carrier confinement and emission spectra. The quantum well tilts strongly with increasing composition of indium. In addition, as the indium concentration increases in the active region, the spontaneous emission decreases and its full width at half maximum increases gradually.
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收藏
页数：6
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