Liquid encapsulated float zone growth of InBi in microgravity

被引：0
|
作者：
Abbaschian, R [1 ]
Lopez, C [1 ]
Gokhale, A [1 ]
Jensen, E [1 ]
Raman, R [1 ]
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
SOLIDIFICATION SCIENCE AND PROCESSING | 1996年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The liquid encapsulated melt zone (LEMZ) growth experiment was conducted on board of the space shuttle Endeavour (STS-57) using InBi as a model material Four samples (three encapsulated with organic liquids and one unencapsulated) were successfully processed with growth times ranging from 17 to 35 hours and growth velocities between 0.56 to 5.6 mu m/s. Encapsulated samples showed better diameter control surface appearance and crystal quality than the unencapsulated one. It was also noted that crystal quality improved with increasing growth velocity as well.
引用
收藏
页码：319 / 329
页数：11
相关论文
共 50 条
  • [11] LIQUID ENCAPSULATED VERTICAL ZONE MELT (VZM) GROWTH OF GAAS CRYSTALS
    SWIGGARD, EM
    JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) : 556 - 558
  • [12] Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
    USAF Rome Lab, Hanscom AFB, United States
    J Cryst Growth, 1-4 (187-193):
  • [13] Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
    Bliss, D
    Demczyk, B
    Anselmo, A
    Bailey, J
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 187 - 193
  • [14] Silicon Float Zone Single Crystal Automatic Growth
    Jin, Lihui
    Wang, Yutian
    Shen, Haoping
    Liu, Jia
    Yang, Chungeng
    Wang, Yanjun
    Chen, Jiaxin
    FRONTIERS OF ADVANCED MATERIALS AND ENGINEERING TECHNOLOGY, PTS 1-3, 2012, 430-432 : 361 - +
  • [15] Numerical simulation of liquid-encapsulant float zone growth of indium phosphide crystals in zero gravity
    Li, Mingwei
    Liu, Chunmei
    Zhu, Tingxia
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2008, 51 (3-4) : 844 - 852
  • [16] LIQUID ENCAPSULATED ZONE-REFINING OF GAAS
    JOHNSON, ES
    ALLRED, WP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (12): : 1185 - 1185
  • [17] GROWTH OF LARGE DIAMETER FLOAT ZONE SILICON-CRYSTALS
    BORLE, WN
    BAL, M
    SHARDA, GD
    SETH, GL
    NANGIA, OP
    BAGAI, RK
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1975, 13 (06) : 406 - 407
  • [18] Float-Zone Growth and Properties of Ferroelectric Lead Titanate
    N. Maffei
    G. A. Rossetti
    Journal of Materials Research, 2004, 19 : 827 - 833
  • [19] Float-zone growth and properties of ferroelectric lead titanate
    Maffei, N
    Rossetti, GA
    JOURNAL OF MATERIALS RESEARCH, 2004, 19 (03) : 827 - 833
  • [20] Float-zone pedestal growth of thin silicon filaments
    Ciszek, TF
    Wang, TH
    HIGH PURITY SILICON V, 1998, 98 (13): : 85 - 89
12345