Interface study of atomic-layer-deposited HfO2/NO-nitrided SiO2 gate dielectric stack on 4H SiC

被引：0
|
作者：
Wu, Yang [1 ,2 ]
Wang, Shurui [1 ,2 ]
Xuan, Yi [1 ,2 ]
Shen, Tian [1 ,2 ]
Ye, Peide D. [1 ,2 ]
Cooper, James A. [1 ,2 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA
[2] Brick Nanotechnol Ctr, W Lafayette, IN 47906 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：292 / +
页数：2
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