Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

被引：93

作者：

Wang, Zhiming M. ^{[1
]}

Holmes, Kyland ^{[1
]}

Mazur, Yuriy I. ^{[1
]}

Ramsey, Kimberly A. ^{[1
]}

Salamo, Gregory J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

NANOSCALE RESEARCH LETTERS | 2006年 / 1卷 / 01期

关键词：

quantum dots; droplet epitaxy;

D O I：

10.1007/s11671-006-9002-z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nanosource. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

引用

页码：57 / 61

页数：5

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