Efficient Spin Injector Scheme Based on Heusler Materials

被引：99

作者：

Chadov, Stanislav ^{[1
]}

Graf, Tanja ^{[1
]}

Chadova, Kristina ^{[2
]}

Dai, Xuefang ^{[1
]}

Casper, Frederick ^{[1
]}

Fecher, Gerhard H. ^{[1
]}

Felser, Claudia ^{[1
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Anorgan & Analyt Chem, D-55099 Mainz, Germany

[2] Univ Munich, Dept Chem & Biochem, D-81377 Munich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 04期

关键词：

MAGNETIC-PROPERTIES; ALLOYS;

D O I：

10.1103/PhysRevLett.107.047202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.

引用

页数：4

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