Wavelength selective saturation in optical absorption of array of self-organized InAs/GaAs QDs

被引：0

作者：

Brunkov, P. N. ^{[1
,2
]}

Gutkin, A. A. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Politekh Skaya, St Petersburg 194021, Russia

[2] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia

来源：

2019 18TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2019年

关键词：

quantum dots; spectral hole; photocurrent; absorption; INAS QUANTUM DOTS; EMISSION; HOLE; ELECTRONS;

D O I：

10.1109/icocn.2019.8934345

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

We present a photocurrent study of a p-i-n GaAs diode incorporating InAs self-organized quantum dots (QDs) in the intrinsic region. In two-color experiments the possibility of spectral hole burning in the QD absorption spectrum by means of resonant excitation of the dot states is demonstrated.

引用

页数：3

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