Wavelength selective saturation in optical absorption of array of self-organized InAs/GaAs QDs

被引：0
作者：
Brunkov, P. N. [1 ,2 ]
Gutkin, A. A. [1 ]
机构：
[1] Ioffe Inst, 26 Politekh Skaya, St Petersburg 194021, Russia
[2] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia
来源：
2019 18TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2019年
关键词：
quantum dots; spectral hole; photocurrent; absorption; INAS QUANTUM DOTS; EMISSION; HOLE; ELECTRONS;
D O I：
10.1109/icocn.2019.8934345
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
We present a photocurrent study of a p-i-n GaAs diode incorporating InAs self-organized quantum dots (QDs) in the intrinsic region. In two-color experiments the possibility of spectral hole burning in the QD absorption spectrum by means of resonant excitation of the dot states is demonstrated.
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页数：3
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