Design of a 3-10 GHZ UWBCMOs T/R switch

A 3-10 GHz broadband CMOS T/R Switch for ultrawideband (UWB) transceiver is proposed. This broadband CMOS transmit/receive (T/R) Switch is fabricated based on the 0.18 mu m IP6M standard CMOS process. On-chip measurement of the CMOS T/R Switch is performed. The insertion loss of the proposed CMOS T/R Switch is about 3.1 +/- 1.3 dB. The return losses at both input and output terminals are higher than 14 dB. It is also characterized with 25 34 dB isolation and 18-20 dBm input P-1dB. The broadband CMOS T/R Switch shows highly linear phase and group delay of 20 10 ps from 10 MHz to 15 GHz. It can be easily integrated with other CMOS RFICs to form on-chip transceivers for various UWB applications. (c) 2007 Wiley Periodicals, Inc.