Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O3 and Pt, Cu and Ag metal electrodes

被引：42

作者：

Chen, Feng ^{[1
]}

Schafranek, Robert ^{[1
]}

Wu, Wenbin ^{[2
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

[2] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 25期

关键词：

RAY PHOTOELECTRON-SPECTROSCOPY; SCHOTTKY-BARRIER HEIGHTS; IN-SITU PHOTOEMISSION; SEMICONDUCTOR INTERFACE; PHYSICS; FILMS; TRANSITION; FATIGUE; STATES; MODEL;

D O I：

10.1088/0022-3727/44/25/255301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface formation between Pb(Zr,Ti)O-3 and Pt, Cu and Ag was studied using in situ photoelectron spectroscopy. A strong interface reaction and a reduction of the substrate surface is observed for all three interfaces as evidenced by the appearance of metallic Pb species. Despite the different work function of the metals, nearly identical barrier heights are found with E-F - E-VB = 1.6 +/- 0.1 eV, 1.8 +/- 0.1 eV and 1.7 +/- 0.1 eV of the as-prepared interfaces with Pt, Cu and Ag, respectively. The barrier heights are characterized by a strong Fermi level pinning, which is attributed to an oxygen deficient interface induced by the chemical reduction of Pb(Zr,Ti)O-3 during metal deposition.

引用

页数：7

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