Heterogeneous Flip-Chip Assembly of a GaAs C-band Power Amplifier MMIC Using Liquid Metal Vertical Interconnects

被引：0

作者：

Ralston, Parrish ^{[1
]}

Wood, Joseph ^{[2
]}

Vummidi, Krishna ^{[1
]}

Oliver, Marcus ^{[1
]}

Raman, Sanjay ^{[1
]}

机构：

[1] Virginia Tech, Wireless Microsyst Lab, Blacksburg, VA 24061 USA

[2] BAE Syst, Nashua, NH 03064 USA

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

Flip chip; Gallium Alloys; MMICs; Interconnects;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new process utilizing room temperature liquid metals as interconnect material for flip chip assembly of active circuits has been demonstrated. These interconnects form flexible bonds between chips of heterogeneous materials and therefore flip clip assembly built with this configuration is not susceptible to thermo mechanical stresses. A prefabricated GaAs MMIC chip is post processed to integrate liquid metal assembly structures. For the operation frequency of the MMIC between 4.9 - 8.5 GHz, average gain of the assembly is greater than 20 dB with an average transition loss of less than 1.8 dB.

引用

页码：1284 / 1287

页数：4

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