Mediation of room temperature ferromagnetism in Co-doped SnO2 nanocrystalline films by structural defects

被引:33
作者
Liu, X. F. [1 ]
Yu, R. H. [1 ]
机构
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2801375
中图分类号
O59 [应用物理学];
学科分类号
摘要
Co-doped SnO2 nanocrystalline films have been fabricated by magnetron sputtering to investigate the effects of structural defects on mediating ferromagnetism in this system. X-ray photoelectron spectroscopy analysis reveals that Co element is incorporated into SnO2 lattice and is in 2+ oxidation state in all samples. High-resolution transmission electron microscopy observation indicates that along the film growth direction, Sn1-xCoxO2 films change from amorphous structure to columnar grain except for the film deposited at room temperature. With the decrease of film thickness, deposition rate, and deposition temperature, a relative proportion of structural defects in films increases, resulting in an enhancement of the saturated magnetic moment of Sn1-xCoxO2 film. Bound magnetic polaron mechanism is adopted to explain the mediation effect of structural defects on ferromagnetism in this system. (C) 2007 American Institute of Physics.
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页数:5
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