Fabrication of AlGaN/GaN-double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SO2 and SiN as gate insulators

被引：20
作者：
Balachander, K [1 ]
Arulkumaran, S
Sano, Y
Egawa, T
Baskar, K
机构：
[1] Nagoya Inst Technol, Res Ctr Nanodevices & Syst, Gokiso Cho Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[3] Oki Elect Ind Co Ltd, Adv Device Lab, Corp Res & Dev Ctr, Tokyo, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 04期
关键词：
D O I：
10.1002/pssa.200410002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the fabrication of AlGaN/GaN double-insulator MOSHEMTs using SiO2 and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch-off voltage compared to conventional HEMTs. SiO2/SiN/AlGaN/GaN MOSHEMTs exhibited a low current collapse and low leakage current compared to SiN MISHEMTs and unpassivated HEMTs. However, the SiN/SiO2/AlGaN/GaN MOSHEMTs exhibited a lower current collapse coupled with moderate leakage current compared to SiO2 MOSHEMTs and unpassivated HEMTs. The comparison of device dc characteristics of double-insulator MOSHEMTs with single-insulator MOSHEMTs revealed its superiority in reducing the problem of current collapse and leakage current simultaneously. (c) 2005 WILEY-VCH Verlag GmbH & Co.
引用
收藏
页码：R32 / R34
页数：3
相关论文
共 14 条
[1]   Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors [J].
Adivarahan, V ;
Gaevski, M ;
Sun, WH ;
Fatima, H ;
Koudymov, A ;
Saygi, S ;
Simin, G ;
Yang, J ;
Khan, MA ;
Tarakji, A ;
Shur, MS ;
Gaska, R .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) :541-543
[2]   Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride [J].
Arulkumaran, S ;
Egawa, T ;
Ishikawa, H ;
Jimbo, T ;
Sano, Y .
APPLIED PHYSICS LETTERS, 2004, 84 (04) :613-615
[3]   Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors [J].
Arulkumaran, S ;
Egawa, T ;
Ishikawa, H ;
Jimbo, T .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3110-3112
[4]   Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC [J].
Arulkumaran, S ;
Egawa, T ;
Ishikawa, H ;
Jimbo, T .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3073-3075
[5]   Studies on electron beam evaporated ZrO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors [J].
Balachander, K ;
Arulkumaran, S ;
Ishikawa, H ;
Baskar, K ;
Egawal, T .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (02) :R16-R18
[6]   Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET [J].
Chiou, YZ ;
Chang, SJ ;
Su, YK ;
Wang, CK ;
Lin, TK ;
Huang, BR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) :1748-1752
[7]   Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates [J].
Chumbes, EM ;
Smart, JA ;
Prunty, T ;
Shealy, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :416-419
[8]  
HASHIZUME T, 2004, TECHNICAL DIGET AWAD, P153
[9]   AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor [J].
Khan, MA ;
Hu, X ;
Sumin, G ;
Lunev, A ;
Yang, J ;
Gaska, R ;
Shur, MS .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (02) :63-65
[10]   Maximum current in nitride-based heterostructure field-effect transistors [J].
Koudymov, A ;
Fatima, H ;
Simin, G ;
Yang, J ;
Khan, MA ;
Tarakji, A ;
Hu, X ;
Shur, MS ;
Gaska, R .
APPLIED PHYSICS LETTERS, 2002, 80 (17) :3216-3218
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