Record Low Threshold Current Density in Quantum Dot Microdisk Laser

被引：10

作者：

Moiseev, E., I ^{[1
]}

Kryzhanovskaya, N., V ^{[1
]}

Zubov, F., I ^{[1
]}

Mikhailovskii, M. S. ^{[2
]}

Abramov, A. N. ^{[2
]}

Maximvo, M., V ^{[1
]}

Kulagina, M. M. ^{[3
]}

Guseva, Yu A. ^{[3
]}

Livshits, D. A. ^{[4
]}

Zhukov, A. E. ^{[1
,2
]}

机构：

[1] Alferov St Petersburg Natl Res Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[3] Ioffe Inst, St Petersburg 194021, Russia

[4] Innolume GmbH, Dortmund, Germany

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 14期

基金：

俄罗斯科学基金会;

关键词：

microdisk laser; quantum dots; threshold current density;

D O I：

10.1134/S106378261914015X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We demonstrate a record low threshold current density of 250 A/cm(2) in a quantum dot microdisk laser with a 31-mu m diameter operating at room temperature in continuous wave regime without temperature stabilization. This low threshold current density is very close to the transparency current density estimated in broad-area edge-emitting lasers made of the same epitaxial wafer.

引用

页码：1888 / 1890

页数：3

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