SnO2-based thick-film-resistive sensor for H2S detection in the concentration range of 1-10 mg m-3

被引：35

作者：

Malyshev, VV ^{[1
]}

Pislyakov, AV ^{[1
]}

机构：

[1] IV Kurchatov Atom Energy Inst, Russian Sci Ctr, Moscow 123182, Kurchatov Area, Russia

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 47卷 / 1-3期

关键词：

sensor; resistance; concentration; sensitivity; humidity;

D O I：

10.1016/S0925-4005(98)00021-5

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Gas-sensitive of SnO2-based thick-film sensors doped with 1-5 wt.% of CuO and 1-3 wt.% Ag2O to H2S in the concentration range of 1-10 mg m(-3) (0.7-6.6 ppm) has been studied. The dependencies of sensor resistance R-g on the heating power (temperature), the H2S concentration and the gas mixture humidity in the range of 0-100% RH have been received. The best gas-sensitive to H2S is shown by the sensors with the additions of 1 wt.% of CuO. It has been ascertained, that their readings at the heating power of 162 mW are practically independent on humidity within the interval of 30-100% RH and the drift of readings during 8 h of observations did not exceed 8%. The results of the work made the basis for the manufacturing of experimental samples with high sensitivity to H,S. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：181 / 188

页数：8