Surface resistance and structure of LuBa2Cu3O7-δ superconducting films prepared by MOCVD

被引:0
作者
Samoylenkov, SV
Gorbenko, OY
Kaul, AR
Graboy, IE
Tarasov, VF
Taborov, VF
Pan, VM
Bobrik, VV
Svetchnikov, VL
Zandbergen, HW
机构
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
[2] Natl Acad Sci Ukraine, GV Kurdyumov Inst Metal Phys, UA-252680 Kyyiv 142, Ukraine
[3] Delft Univ Technol, Natl Ctr HREM, NL-2628 AL Delft, Netherlands
来源
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 1998年 / 20卷 / 04期
关键词
surface resistance; thin epitaxial film; sapphire substrate; MOCVD; microwave loss;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
LuBa2Cu3O7-delta/LaAlO3 (delta = 0.03 and 0.15) and LuBa2C3O7-deltaCeO2/Al2O3 thin epitaxial films were prepared by flash evaporation MOCVD, and their structural (XRD and TEM) and microwave characterization was performed. LuBa2Cu3O7-delta/LaAlO3 films showed remarkably lower values of surface resistance R-s (77 K, 32 GHZ) as compared to the copper. The temperature dependence of R-s for LuBa2Cu3O7-delta/LaAlO3 films was observed to be consistent with the optimization of the hole concentration in CuO2 planes of LuBa2Cu3O7-delta structure at delta approximate to 0.15. The electrophysical properties of LuBa2Cu3O7-delta/CeO2/Al2O3 sample were found to be relatively poor, probably, due to the large amount of secondary phases in the sample.
引用
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页码:3 / 6
页数:4
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