Gold-aluminum intermetallic formation kinetics

被引：26

作者：

Blish, Richard C., II ^{[1
]}

Li, Susan ^{[1
]}

Kinoshita, Hiroyuki ^{[1
]}

Morgan, Sheila ^{[1
]}

Myers, Alline F. ^{[1
]}

机构：

[1] Spansion Inc, Sunnyvale, CA 94088 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2007年 / 7卷 / 01期

关键词：

integrated circuit bonding; integrated circuit packaging; integrated circuit reliability; life estimation; wire;

D O I：

10.1109/TDMR.2007.891533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au-Al intermetallic compounds (IMC) grow laterally (Al-rich phases) in a Fickian fashion with an activation energy of 1.0 eV, but vertical IMC thickness (Au-rich phases) grows functionally as a power law on time with a sub-Fickian exponent of -1/4, which is substantially smaller than what would be expected for bulk lattice diffusion (1/2). We conclude from the IMC thickness time exponent. that an Au-rich IMC growth process is limited by grain boundary diffusion. The best bond lifetime was seen for an intermediate-thickness Al film. The activation energy and lifetime for Au-rich phase growth are each a strong function of wire impurity concentrations. We find that bond lifetime varies roughly as the square robot of Pd, Cu, Pt, and As concentrations, but lifetime is not a function of Be, Ca, Fe, or Cr concentration. We find a mixture of Au4Al and Au on the Al-rich side of the failing interface.

引用

页码：51 / 63

页数：13

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