Gold-aluminum intermetallic formation kinetics

被引:26
作者
Blish, Richard C., II [1 ]
Li, Susan [1 ]
Kinoshita, Hiroyuki [1 ]
Morgan, Sheila [1 ]
Myers, Alline F. [1 ]
机构
[1] Spansion Inc, Sunnyvale, CA 94088 USA
关键词
integrated circuit bonding; integrated circuit packaging; integrated circuit reliability; life estimation; wire;
D O I
10.1109/TDMR.2007.891533
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Au-Al intermetallic compounds (IMC) grow laterally (Al-rich phases) in a Fickian fashion with an activation energy of 1.0 eV, but vertical IMC thickness (Au-rich phases) grows functionally as a power law on time with a sub-Fickian exponent of -1/4, which is substantially smaller than what would be expected for bulk lattice diffusion (1/2). We conclude from the IMC thickness time exponent. that an Au-rich IMC growth process is limited by grain boundary diffusion. The best bond lifetime was seen for an intermediate-thickness Al film. The activation energy and lifetime for Au-rich phase growth are each a strong function of wire impurity concentrations. We find that bond lifetime varies roughly as the square robot of Pd, Cu, Pt, and As concentrations, but lifetime is not a function of Be, Ca, Fe, or Cr concentration. We find a mixture of Au4Al and Au on the Al-rich side of the failing interface.
引用
收藏
页码:51 / 63
页数:13
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