A GaN-Based Active Diode Circuit for Low-Loss Rectification

被引：0

作者：

Basler, Michael ^{[1
]}

Reiner, Richard ^{[1
]}

Moench, Stefan ^{[1
]}

Waltereit, Patrick ^{[1
]}

Quay, Rudiger ^{[1
]}

Kallfass, Ingmar ^{[2
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Fraunhofer IAF, Freiburg, Germany

[2] Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany

来源：

2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2021年

关键词：

Adive diode; synchronous rectifier; gallium nitride; self-driven HEMT; reverse diode; power integrated circuits;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This work investigates a new approach of an active diode circuit. The concept is applied in a high-voltage GaN-on-Si Technology with p-GaN gate module. The GaN-based active diode includes a simple control with voltage zero detection. A significantly reduced forward voltage of the active diode is demonstrated in a half-wave rectification (230 V-AC, 50 Hz). Compared with a diode in the same technology, a forward voltage reduction of 75% (from a forward current of 1A) is achieved and compared with other commercial diode types, a reduction of 33% (from an area-scaled forward current of 0.5 -1 A/mm(2)) is achieved. At higher frequencies and at lower AC voltages, the active diode also shows an improved performance compared to conventional rectifier diodes. Thus, this concept offers an enormous potential for low-loss rectification and is suitable for a monolithic integration.

引用

页码：59 / 62

页数：4

共 11 条

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