Transition Metal Dichalcogenides (TMDCs) Heterostructures: Synthesis, Excitons and Photoelectric Properties

被引:21
作者
Fan, Jianuo [1 ]
Sun, Mengtao [1 ]
机构
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Sch Math & Phys, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
Heterostructure; Superlattice; Interlayer exciton; Optoelectronics; Transition metal dichalcogenides; Valley dynamics; ELECTRONIC-PROPERTIES; EPITAXIAL-GROWTH; NOBEL LECTURE; GRAPHENE; MOS2; GENERATION; PHYSICS; DIODES;
D O I
10.1002/tcr.202100313
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transition metal dichalcogenides (TMDCs) have good flexibility, light absorption, and carrier mobility, and can be used to fabricate wearable devices and photodetectors. In addition, the band gaps of these materials are adjustable, which are related to the number of stacking layers. The the material properties can be changed by vertically stacking TMDCs to form van der Waals (vdW) heterostructures. Compared with single-layer TMDC, the vdW heterostructure has better light response and more efficient photoelectric conversion. Interlayer excitons formed in vdW heterostructure have a longer exciton lifetime and unique valley selectivity compared with intralayer excitons, which promotes the research on TMDCs materials in photoelectric field, valley electronics, carrier dynamics, etc. In this paper, the methods of synthesizing heterostructures are introduced. Photoelectric properties, valley dynamics, electronic properties and related applications of TMDCs vdW heterostructures are also discussed. Heterostructures stacked with different materials, stacking modes, and twist angles all can affect the properties. Hence, it brings more creativity and research direction to the material field.
引用
收藏
页数:34
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